Minxue Wang

Minxue obtained a Bachelor’s degree in Electronic Science and Technology from Taiyuan University of Technology in 2021. They then pursued a Master’s degree at Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, where their research focused on femtosecond laser-induced lattice disorder in gallium nitride (GaN) nanostructures. In 2024, Minxue joined the Huang Group. Currently, they are learning about the excitonic properties of group-VI transition-metal dichalcogenides (TMDs) and their integration and coupling with photonic devices. Outside the lab, Minxue enjoys watching movies, bookmaking, and embarking on road trips.